Application of the Level Set Method in Three-Dimensional Simulations of the Profile Evolution
Branislav Radjenović, Marija Radmilović-Radjenović, Petar Beličev
International Research Journal of Pure and Applied Chemistry · pp. 562–567 · Published 17 May 2014
10.9734/IRJPAC/2014/8704Abstract
In this paper, the angular dependence of the etching rate is applied in the three-dimensional simulations of the profile evolution during etching process. Etching rates are determined from the silicon symmetry properties by the interpolation technique using experimentally obtained values. The influence of the KOH concentration on the etch rate is also discussed. As the etchant concentration increases the etching rate decreases, while increasing etching temperature resulted in increased etching rate. Three-dimensional simulation results were obtained using an extension of the sparse field method for solving level set equations that describe the time evolution of the surface during etching process. The obtained simulation results illustrate that relatively simple model with only four parameters describes convex corner undercutting correctly.
References (10)
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Cited by 2
Aiden A. Martin, Alan Bahm, James Bishop · Physical Review Letters · 2015
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